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NTS2101PT1

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The NTS2101PT1 from onsemi is a MOSFET with Continous Drain Current -1.4 A, Drain Source Resistance 65 to 210 milliohm, Drain Source Breakdown Voltage -8 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTS2101PT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTS2101PT1
  • Manufacturer
    onsemi
  • Description
    -8 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.4 A
  • Drain Source Resistance
    65 to 210 milliohm
  • Drain Source Breakdown Voltage
    -8 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    6.4 nC
  • Power Dissipation
    0.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-70 (SOT-323)
  • Applications
    High Side Load Switch, Charging Circuit, Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs

Technical Documents
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