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NTTFD4D1N03P1E

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NTTFD4D1N03P1E Image

The NTTFD4D1N03P1E from onsemi is a MOSFET with Continous Drain Current 54 A, Drain Source Resistance 2.9 to 5.4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for NTTFD4D1N03P1E can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFD4D1N03P1E
  • Manufacturer
    onsemi
  • Description
    30 V, 6.3 to 6.7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    54 A
  • Drain Source Resistance
    2.9 to 5.4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    6.3 to 6.7 nC
  • Power Dissipation
    20 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WQFN-12
  • Applications
    DC-DC Converters, System Voltage Rails

Technical Documents
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