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NTTFS6H860NTAG

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The NTTFS6H860NTAG from onsemi is a MOSFET with Continous Drain Current 33 A, Drain Source Resistance 17.3 to 33.9 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NTTFS6H860NTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFS6H860NTAG
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    33 A
  • Drain Source Resistance
    17.3 to 33.9 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.7 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Synchronous Rectification

Technical Documents
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