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NTZD3152PT1G

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The NTZD3152PT1G from onsemi is a MOSFET with Continous Drain Current -0.43 A, Drain Source Resistance 500 to 2000 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -1 to -0.45 V. Tags: Surface Mount. More details for NTZD3152PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTZD3152PT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.43 A
  • Drain Source Resistance
    500 to 2000 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -1 to -0.45 V
  • Gate Charge
    1.7 to 2.5 nC
  • Power Dissipation
    0.28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563-6
  • Applications
    Load/Power Switches, Power Supply Converter Circuits, Battery Management, Cell Phones, Digital Cameras, PDAs, Pagers

Technical Documents
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