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NVA4153NT1G

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The NVA4153NT1G from onsemi is a MOSFET with Continous Drain Current 0.915 A, Drain Source Resistance 127 to 950 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage 0.45 to 1.1 V. Tags: Surface Mount. More details for NVA4153NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVA4153NT1G
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.915 A
  • Drain Source Resistance
    127 to 950 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    0.45 to 1.1 V
  • Gate Charge
    1.82 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-75-3
  • Applications
    Load/Power Switches, Driver Circuits: Relays, Lamps, Displays, Memories, Battery Management/Battery Operated Systems, Cell Phones, Digital Cameras, PDAs, Pagers

Technical Documents
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