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NVB082N65S3F

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The NVB082N65S3F from onsemi is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 64 to 82 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for NVB082N65S3F can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVB082N65S3F
  • Manufacturer
    onsemi
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    64 to 82 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    81 nC
  • Power Dissipation
    313 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 (TO-263)
  • Applications
    Automotive On Board Charger, Automotive DC/DC Converter for HEV

Technical Documents
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