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NVBG020N090SC1

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The NVBG020N090SC1 from onsemi is a MOSFET with Continous Drain Current 112 A, Drain Source Resistance 16 to 28 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -8 to 22 V, Gate Source Threshold Voltage 1.8 to 4.3 V. Tags: Surface Mount. More details for NVBG020N090SC1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVBG020N090SC1
  • Manufacturer
    onsemi
  • Description
    900 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    112 A
  • Drain Source Resistance
    16 to 28 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -8 to 22 V
  • Gate Source Threshold Voltage
    1.8 to 4.3 V
  • Gate Charge
    200 nC
  • Power Dissipation
    477 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-7L
  • Applications
    Automotive On Board Charger, Automotive DC-DC Converter for EV/HEV

Technical Documents
View details on the manufacturer's website
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