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NVBLS1D7N10MC

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NVBLS1D7N10MC Image

The NVBLS1D7N10MC from onsemi is a MOSFET with Continous Drain Current 265 A, Drain Source Resistance 1.5 to 1.8 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVBLS1D7N10MC can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVBLS1D7N10MC
  • Manufacturer
    onsemi
  • Description
    100 V, 115 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    265 A
  • Drain Source Resistance
    1.5 to 1.8 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    115 nC
  • Power Dissipation
    303 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    H-PSOF8L

Technical Documents
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