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NVCR4LS1D6N10MCA

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The NVCR4LS1D6N10MCA from onsemi is a MOSFET with Continous Drain Current 265 A, Drain Source Resistance 1.5 to 1.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Wafer. More details for NVCR4LS1D6N10MCA can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVCR4LS1D6N10MCA
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 115 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    6.800 x 4.150 mm
  • Number of Channels
    Single
  • Continous Drain Current
    265 A
  • Drain Source Resistance
    1.5 to 1.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    115 nC
  • Power Dissipation
    303 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Applications
    Switching Power Supplies, Power switches (High side driver, Low side driver, H-Bridges, etc), Reverse Battery protection

Technical Documents
View details on the manufacturer's website
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