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STD1NK60-1

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STD1NK60-1 Image

The STD1NK60-1 from STMicroelectronics is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 7300 to 8500 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.25 to 3.7 V. Tags: Through Hole. More details for STD1NK60-1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD1NK60-1
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    7300 to 8500 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.25 to 3.7 V
  • Gate Charge
    7 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    IPAK
  • Applications
    Low power battery chargers, Swith mode low power supplies (SMPS), Low power, ballast, CFL (compact fluorescent lamps)

Technical Documents
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