The SSM10N954L from Toshiba is a Dual N-Channel Power MOSFET that is specifically designed for battery protection circuits. It has a drain-source breakdown voltage of over 12 V, a gate threshold voltage of 1.4 V, and a source resistance of 2.1-2.4 milli-ohms. This RoHS complaint MOSFET has a power dissipation of up to 0.8 W and offers low source-source on-resistance. It is available in a surface-mount package that measures 2.98 x 1.49 x 0.11 mm.
