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NVCR4LS1D7N08M7A

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The NVCR4LS1D7N08M7A from onsemi is a MOSFET with Continous Drain Current 295 A, Drain Source Resistance 1.5 to 4.1 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Wafer. More details for NVCR4LS1D7N08M7A can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVCR4LS1D7N08M7A
  • Manufacturer
    onsemi
  • Description
    80 V, 130 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    295 A
  • Drain Source Resistance
    1.5 to 4.1 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    130 nC
  • Power Dissipation
    357 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Wafer

Technical Documents
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