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NVD260N65S3T4G

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The NVD260N65S3T4G from onsemi is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 217 to 260 milli-ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for NVD260N65S3T4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVD260N65S3T4G
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 23.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    217 to 260 milli-ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    23.5 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3
  • Applications
    HV DC/DC converter, On Board Charger

Technical Documents
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