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NVD3055L170T4G

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The NVD3055L170T4G from onsemi is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 153 to 170 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for NVD3055L170T4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVD3055L170T4G
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    153 to 170 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    1.4 to 10 nC
  • Power Dissipation
    28.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Supplies, Converters, Power Motor Controls, Bridge Circuits

Technical Documents
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