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NVHL025N65S3

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NVHL025N65S3 Image

The NVHL025N65S3 from onsemi is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 19.9 to 34.5 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for NVHL025N65S3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVHL025N65S3
  • Manufacturer
    onsemi
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    19.9 to 34.5 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    236 nC
  • Power Dissipation
    595 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3LD
  • Applications
    Automotive PHEV-BEV DC-DC Converter, Automotive Onboard Charger for PHEV-BEV

Technical Documents
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