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NVJD4401NT1G

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NVJD4401NT1G Image

The NVJD4401NT1G from onsemi is a MOSFET with Continous Drain Current 0.91 A, Drain Source Resistance 290 to 445 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for NVJD4401NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVJD4401NT1G
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.91 A
  • Drain Source Resistance
    290 to 445 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    1.3 to 3 nC
  • Power Dissipation
    0.55 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88(SOT-363)
  • Applications
    Load Power Switching, Li-Ion Battery Supplied Devices, Cell Phones, Media Players, Digital Cameras, PDAs, DC-DC Conversion

Technical Documents
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