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NVMJS1D4N06CLTWG

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NVMJS1D4N06CLTWG Image

The NVMJS1D4N06CLTWG from onsemi is a MOSFET with Continous Drain Current 262 A, Drain Source Resistance 1.07 to 1.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVMJS1D4N06CLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMJS1D4N06CLTWG
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    262 A
  • Drain Source Resistance
    1.07 to 1.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    47 to 103 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-8
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Technical Documents
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