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NVMTS1D2N08H

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NVMTS1D2N08H Image

The NVMTS1D2N08H from onsemi is a MOSFET with Continous Drain Current 337 A, Drain Source Resistance 0.93 to 1.1 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMTS1D2N08H can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMTS1D2N08H
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    337 A
  • Drain Source Resistance
    0.93 to 1.1 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    147 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNW-8
  • Applications
    Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), 48 V Systems

Technical Documents
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