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IRFBE30

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IRFBE30 Image

The IRFBE30 from Vishay is a MOSFET with Continous Drain Current 4.1 A, Drain Source Resistance 3000 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFBE30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFBE30
  • Manufacturer
    Vishay
  • Description
    800 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.1 A
  • Drain Source Resistance
    3000 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    78 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
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