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NVMYS2D3N06C

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NVMYS2D3N06C Image

The NVMYS2D3N06C from onsemi is a MOSFET with Continous Drain Current 171 A, Drain Source Resistance 1.9 to 2.3 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for NVMYS2D3N06C can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMYS2D3N06C
  • Manufacturer
    onsemi
  • Description
    60 V, 46 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    171 A
  • Drain Source Resistance
    1.9 to 2.3 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    46 nC
  • Power Dissipation
    134.4 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK-4

Technical Documents
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