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NVTYS013N10MCL

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NVTYS013N10MCL Image

The NVTYS013N10MCL from onsemi is a MOSFET with Continous Drain Current 52 A, Drain Source Resistance 10.9 to 20.9 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for NVTYS013N10MCL can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVTYS013N10MCL
  • Manufacturer
    onsemi
  • Description
    3 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    52 A
  • Drain Source Resistance
    10.9 to 20.9 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    10 to 19 nC
  • Power Dissipation
    71 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK8
  • Applications
    Switching Power Supplies, Reverse Battery Protection

Technical Documents
View details on the manufacturer's website
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