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RFP50N06

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The RFP50N06 from onsemi is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 22 mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RFP50N06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RFP50N06
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 150 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    22 mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    150 nC
  • Power Dissipation
    131 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3
  • Applications
    Switching regulators, switching converters, motor drivers, and relay drivers

Technical Documents
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