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FC4B21080L

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The FC4B21080L from Panasonic Corporation is a MOSFET with Drain Source Resistance 18 to 100 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.4 to 1.4 V, Gate Charge 7.1 nC. Tags: Chip. More details for FC4B21080L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FC4B21080L
  • Manufacturer
    Panasonic Corporation
  • Description
    12 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Drain Source Resistance
    18 to 100 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.4 to 1.4 V
  • Gate Charge
    7.1 nC
  • Power Dissipation
    0.35 W
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP

Technical Documents
View details on the manufacturer's website
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