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FCAB21890L

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The FCAB21890L from Panasonic Corporation is a MOSFET with Drain Source Resistance 1.3 to 5.8 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.35 to 1.4 V, Gate Charge 26 nC. Tags: Chip. More details for FCAB21890L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB21890L
  • Manufacturer
    Panasonic Corporation
  • Description
    8 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Drain Source Resistance
    1.3 to 5.8 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    26 nC
  • Power Dissipation
    0.54 to 3.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP

Technical Documents
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