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FCAB21920L

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The FCAB21920L from Panasonic Corporation is a MOSFET with Continous Drain Current 47.6 A, Drain Source Resistance 0.7 to 3.2 Milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.35 to 1.4 V. Tags: Chip. More details for FCAB21920L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCAB21920L
  • Manufacturer
    Panasonic Corporation
  • Description
    12 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    47.6 A
  • Drain Source Resistance
    0.7 to 3.2 Milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.35 to 1.4 V
  • Gate Charge
    72 nC
  • Power Dissipation
    3.4 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Lithium-ion Battery Protection

Technical Documents
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