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FJ4B0619ZL

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The FJ4B0619ZL from Panasonic Corporation is a MOSFET with Continous Drain Current -3.2 A, Drain Source Resistance 88 to 230 Milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Chip. More details for FJ4B0619ZL can be seen below.

Product Specifications

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Product Details

  • Part Number
    FJ4B0619ZL
  • Manufacturer
    Panasonic Corporation
  • Description
    -60 V, P-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    P-Channel Depletion Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.2 A
  • Drain Source Resistance
    88 to 230 Milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    11 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Applications
    Automotive Switching Circuit

Technical Documents
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