PJA3446-AU

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The PJA3446-AU from PANJIT Semiconductor is an Automotive Qualified N-Channel Enhancement Mode MOSFET that has been specifically designed for switch load applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.8 V, and a drain-source on-resistance of less than 51 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 4.1 mA and a power dissipation of less than 125 W. It offers outstanding performance and efficiency due to its high switching speed, low gate charge, and low reverse transfer capacitance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 3.04 x 1.40 x 1.10 mm.

Product Specifications

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Product Details

  • Part Number
    PJA3446-AU
  • Manufacturer
    PANJIT Semiconductor
  • Description
    Automotive Qualified N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.04 x 1.40 x 1.10 mm
  • Number of Channels
    Single
  • Continous Drain Current
    4.1 mA
  • Drain Source Resistance
    51 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.8 V
  • Gate Charge
    4.4 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Switch Load Applications

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