1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPD50N06S4-09

IPD50N06S4-09

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPD50N06S4-09 Image

The IPD50N06S4-09 from Infineon Technologies is a MOSFET with Continous Drain Current 47 to 50 A, Drain Source Resistance 7.1 to 9 Mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPD50N06S4-09 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPD50N06S4-09
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    47 to 50 A
  • Drain Source Resistance
    7.1 to 9 Mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    36 to 47 nC
  • Power Dissipation
    71 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products