The PJD4NA60 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1920 to 2400 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PJD4NA60 can be seen below.