PJMF130N65EC

Note : Your request will be directed to PANJIT Semiconductor.

PJMF130N65EC Image

The PJMF130N65EC from PANJIT Semiconductor is a MOSFET with Continous Drain Current 29 A, Drain Source Resistance 113 to 130 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for PJMF130N65EC can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJMF130N65EC
  • Manufacturer
    PANJIT Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    29 A
  • Drain Source Resistance
    113 to 130 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    51 nC
  • Power Dissipation
    14 to 33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO-220AB-F
  • Applications
    PFC, TV Power, PC Power, PD Charger, Adapter, UPS

Technical Documents

Latest MOSFETs

View more products