1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. PANJIT Semiconductor
  6. PJMF900N65E1

PJMF900N65E1

Download Datasheet Request Quote

Note : Your request will be directed to PANJIT Semiconductor.

PJMF900N65E1 Image

The PJMF900N65E1 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 4.7 A, Drain Source Resistance 725 to 900 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for PJMF900N65E1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJMF900N65E1
  • Manufacturer
    PANJIT Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.7 A
  • Drain Source Resistance
    725 to 900 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    13 nC
  • Power Dissipation
    10.2 to 25.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO-220AB-F
  • Applications
    Adapter, LED Lighting, USB-C PD Charger, Coffee Machine PSU

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products