1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. PANJIT Semiconductor
  6. PJP2NA70

PJP2NA70

Download Datasheet Request Quote

Note : Your request will be directed to PANJIT Semiconductor.

PJP2NA70 Image

The PJP2NA70 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 5200 to 6500 milliohm, Drain Source Breakdown Voltage 700 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for PJP2NA70 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJP2NA70
  • Manufacturer
    PANJIT Semiconductor
  • Description
    700 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    5200 to 6500 milliohm
  • Drain Source Breakdown Voltage
    700 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7.8 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products