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PJQ1906

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The PJQ1906 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 700 to 4000 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for PJQ1906 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ1906
  • Manufacturer
    PANJIT Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    700 to 4000 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    0.9 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN 3L

Technical Documents
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