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PJQ4476AP

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The PJQ4476AP from PANJIT Semiconductor is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 20 to 28.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PJQ4476AP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ4476AP
  • Manufacturer
    PANJIT Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    20 to 28.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    31 nC
  • Power Dissipation
    62 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3333-8L

Technical Documents
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