PJQ5606

Note : Your request will be directed to PANJIT Semiconductor.

PJQ5606 Image

The PJQ5606 from PANJIT Semiconductor is a MOSFET with Continous Drain Current -14 to 25 A, Drain Source Resistance 16 to 45 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for PJQ5606 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJQ5606
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -30 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -14 to 25 A
  • Drain Source Resistance
    16 to 45 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to 2.5 V
  • Gate Charge
    4.8 to 7.8 nC
  • Power Dissipation
    21 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060B-8L

Technical Documents

Latest MOSFETs

View more products