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YJS8205A

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The YJS8205A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 5.5 A, Drain Source Resistance 19.5 to 49 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for YJS8205A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJS8205A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.5 A
  • Drain Source Resistance
    19.5 to 49 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    6.05 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    PWM application, Load switch

Technical Documents
View details on the manufacturer's website
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