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PJS6602

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The PJS6602 from PANJIT Semiconductor is a MOSFET with Continous Drain Current -3.4 to 5.2 A, Drain Source Resistance 29 to 146 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to 1.2 V. Tags: Surface Mount. More details for PJS6602 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJS6602
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -20 to 20 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.4 to 5.2 A
  • Drain Source Resistance
    29 to 146 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to 1.2 V
  • Gate Charge
    4.1 to 7 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23 6L

Technical Documents
View details on the manufacturer's website
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