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PRM2R9N10PT-L

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The PRM2R9N10PT-L from PFC Device is a MOSFET with Continous Drain Current 160 to 295 A, Drain Source Resistance 2.4 to 2.9 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for PRM2R9N10PT-L can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM2R9N10PT-L
  • Manufacturer
    PFC Device
  • Description
    100 V, 160 to 295 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    160 to 295 A
  • Drain Source Resistance
    2.4 to 2.9 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    114 nC
  • Switching Speed
    50 to 110 ns
  • Power Dissipation
    468 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-L
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 7333 pF

Technical Documents
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