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PRM8R0N10CT

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The PRM8R0N10CT from PFC Device is a MOSFET with Continous Drain Current 64 to 101 A, Drain Source Resistance 7.0 to 12.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Through Hole. More details for PRM8R0N10CT can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM8R0N10CT
  • Manufacturer
    PFC Device
  • Description
    100 V, 64 to 101 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    64 to 101 A
  • Drain Source Resistance
    7.0 to 12.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    33 nC
  • Switching Speed
    9 to 107 ns
  • Power Dissipation
    138 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 1990 pF

Technical Documents
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