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UJ4C075060B7S

MOSFET by Qorvo (24 more products)
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The UJ4C075060B7S from Qorvo is a MOSFET with Continous Drain Current 19 to 25.8 A, Drain Source Resistance 58 to 147 milliohm, Drain Source Breakdown Voltage 750 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 to 6 V. Tags: Surface Mount. More details for UJ4C075060B7S can be seen below.

Product Specifications

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Product Details

  • Part Number
    UJ4C075060B7S
  • Manufacturer
    Qorvo
  • Description
    750 V, N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 to 25.8 A
  • Drain Source Resistance
    58 to 147 milliohm
  • Drain Source Breakdown Voltage
    750 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 to 6 V
  • Gate Charge
    37.8 nC
  • Power Dissipation
    128 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-7L
  • Applications
    EV charging, PV inverters, Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating

Technical Documents
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