1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM100N60LD

RM100N60LD

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM100N60LD Image

The RM100N60LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 4.8 to 5.5 milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM100N60LD can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM100N60LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    65 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    4.8 to 5.5 milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    36 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252-2L
  • Applications
    Load switching, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products