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RM110N150HD

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The RM110N150HD from Rectron Semiconductor is a MOSFET with Continous Drain Current 113 A, Drain Source Resistance 7.9 to 8.8 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM110N150HD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM110N150HD
  • Manufacturer
    Rectron Semiconductor
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    113 A
  • Drain Source Resistance
    7.9 to 8.8 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    52 nC
  • Power Dissipation
    273 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TO-263-2L
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification

Technical Documents
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