1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM120N30DF

RM120N30DF

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM120N30DF Image

The RM120N30DF from Rectron Semiconductor is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 1.95 to 3.35 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for RM120N30DF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM120N30DF
  • Manufacturer
    Rectron Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    1.95 to 3.35 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    63 to 72 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN5X6-8L
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products