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RM150N40DFV

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RM150N40DFV Image

The RM150N40DFV from Rectron Semiconductor is a MOSFET with Continous Drain Current 150 A, Drain Source Resistance 1.6 to 2.3 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for RM150N40DFV can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM150N40DFV
  • Manufacturer
    Rectron Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    150 A
  • Drain Source Resistance
    1.6 to 2.3 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    95 to 115 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    DFN5X6-8L
  • Applications
    DC/DC Converter, Ideal for high-frequency switching and synchronous rectification, Halogen free

Technical Documents
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