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RM18P100HDE

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The RM18P100HDE from Rectron Semiconductor is a MOSFET with Continous Drain Current -18 A, Drain Source Resistance 85 to 100 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RM18P100HDE can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM18P100HDE
  • Manufacturer
    Rectron Semiconductor
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -18 A
  • Drain Source Resistance
    85 to 100 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    61 nC
  • Power Dissipation
    70 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TO-263(D2-PAK)
  • Applications
    Power management in notebook computer, Portable equeipment and battery powered systems, halogen free

Technical Documents
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