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RM1A4N150S6

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RM1A4N150S6 Image

The RM1A4N150S6 from Rectron Semiconductor is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 380 to 520 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM1A4N150S6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM1A4N150S6
  • Manufacturer
    Rectron Semiconductor
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    380 to 520 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.1 to 16 nC
  • Power Dissipation
    1.56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Networking, Load Switch, LED applications

Technical Documents
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