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RM25P30S8

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The RM25P30S8 from Rectron Semiconductor is a MOSFET with Continous Drain Current -25 A, Drain Source Resistance 6.4 to 14 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RM25P30S8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM25P30S8
  • Manufacturer
    Rectron Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -25 A
  • Drain Source Resistance
    6.4 to 14 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    65 nC
  • Power Dissipation
    3.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Power management, Load switch

Technical Documents
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