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RM25P60LDV

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The RM25P60LDV from Rectron Semiconductor is a MOSFET with Continous Drain Current -25 A, Drain Source Resistance 49 to 72 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.2 to -1 V. Tags: Surface Mount. More details for RM25P60LDV can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM25P60LDV
  • Manufacturer
    Rectron Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -25 A
  • Drain Source Resistance
    49 to 72 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1 V
  • Gate Charge
    37.6 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TO-252-2L
  • Applications
    High side switch for full bridge conveter, DC/DC converter for LCD display, Halogen free

Technical Documents
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