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TPCP8109

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TPCP8109 Image

The TPCP8109 from Toshiba is a MOSFET with Continous Drain Current -4.5 A, Drain Source Resistance 4.3 to 76.8 Milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -3 to -2 V. Tags: Surface Mount. More details for TPCP8109 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPCP8109
  • Manufacturer
    Toshiba
  • Description
    -40 V, 18 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.5 A
  • Drain Source Resistance
    4.3 to 76.8 Milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -3 to -2 V
  • Gate Charge
    18 nC
  • Power Dissipation
    1.96 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PS-8
  • Applications
    Motor Drivers, Mobile Equipment

Technical Documents
View details on the manufacturer's website
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