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MG600Q2YMS3

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The MG600Q2YMS3 from Toshiba is a MOSFET with Continous Drain Current 600 A, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 3.6 to 5.6 V, Power Dissipation 2000 W. Tags: Surface Mount. More details for MG600Q2YMS3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MG600Q2YMS3
  • Manufacturer
    Toshiba
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    600 A
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3.6 to 5.6 V
  • Power Dissipation
    2000 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMI153A
  • Applications
    High-Power Switching, Motor Controllers (including rail traction)

Technical Documents
View details on the manufacturer's website
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